? 2009 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 100 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 2.96 3.5 v t j = 125 c 2.95 v ds99730b(10/09) v ces = 1200v i c110 = 30a v ce(sat) 3.5v t fi(typ) = 204ns genx3 tm 1200v igbts high-speed low-vsat pt igbts 3-20 khz switching features z optimized for low conduction and switching losses z square rbsoa z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z welding machines ixga30n120b3 ixgp30n120b3 IXGH30N120B3 symbol test conditions maximum ratings v ces t c = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 30 a i cm t c = 25c, 1ms 150 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 60 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 300 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g g = gate c = collector e = emitter tab = collector to-220 (ixgp) to-263 (ixga) g e g c e to-247 (ixgh) g c e c (tab) c (tab) c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixga30n120b3 ixgp30n120b3 IXGH30N120B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 11 19 s c ies 1750 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 120 pf c res 46 pf q g 87 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 39 nc t d(on) 16 ns t ri 37 ns e on 3.47 mj t d(off) 127 200 ns t fi 204 380 ns e off 2.16 4.0 mj t d(on) 18 ns t ri 38 ns e on 6.70 mj t d(off) 216 ns t fi 255 ns e off 5.10 mj r thjc 0.42 c/w r thcs to-220 0.50 c/w r thcs to-247 0.21 c/w inductive load, t j = 25 c i c = 30a, v ge = 15v v ce = 0.8 ? v ces , r g = 5 notes 2 inductive load, t j = 125 c i c = 30a,v ge = 15v v ce = 0.8 ? v ces ,r g = 5 notes 2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixgp) outline to-247 (ixgh) ad outline 1 = gate 2 = collector 3 = emitter to-263 (ixga) outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005
? 2009 ixys corporation, all rights reserved ixga30n120b3 ixgp30n120b3 IXGH30N120B3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes 9v 7v v ge = 15v 13v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 3 6 9 12 15 18 21 24 27 30 v ce - volts i c - amperes v ge = 15v 7v 11v 9v 13v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes 7v 9v v ge = 15v 13v 11v 5v fig. 4. dependence of v ce(sat) on junctiontemperature 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 60 a t j = 25oc 30 a 15 a fig. 6. input admittance 0 10 20 30 40 50 60 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixga30n120b3 ixgp30n120b3 IXGH30N120B3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 4 8 12 16 20 24 0 10203040506070 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 600v i c = 30a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixga30n120b3 ixgp30n120b3 IXGH30N120B3 fig. 12. inductive switching energy loss vs. gate resistance 2 4 6 8 10 12 14 16 18 5 7 9 1113151719212325 r g - ohms e off - millijoules 4 6 8 10 12 14 16 18 20 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 960v i c = 60a i c = 30a fig. 17. inductive turn-off switching times vs. junction temperature 125 175 225 275 325 375 425 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 100 130 160 190 220 250 280 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 960v i c = 60a, 30a fig. 15. inductive turn-off switching times vs. gate resistance 220 260 300 340 380 420 460 5 7 9 1113151719212325 r g - ohms t f - nanoseconds 50 150 250 350 450 550 650 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 60a i c = 30a fig. 13. inductive switching energy loss vs. collector current 0 2 4 6 8 10 12 14 16 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 2 4 6 8 10 12 14 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 960v i c = 60a i c = 30a fig. 16. inductive turn-off switching times vs. collector current 100 150 200 250 300 350 400 450 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 50 100 150 200 250 300 350 400 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. ixga30n120b3 ixgp30n120b3 IXGH30N120B3 ixys ref: g_30n120b3(4a)10-06-09-a fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 110 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 8 10 12 14 16 18 20 22 24 26 28 30 t d ( on ) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 960v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 10 30 50 70 90 110 130 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 14 16 18 20 22 24 26 t d ( on ) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 960v i c = 30a i c = 60a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 5 7 9 11 13 15 17 19 21 23 25 r g - ohms t r - nanoseconds 14 18 22 26 30 34 38 42 46 50 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 30a i c = 60a
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